2564-7814
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Cosmetic Suggestion Based On Skin Condition Using Artificial Intelligence
Volume -39 | Issue - 2
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SEPTIC: Vulnerabilities in the DBMS and injection attacks are noted
Volume -39 | Issue - 2
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WearMask: Rapid In-browser Face Mask Recognition for COVID-19 Using Serverless Edge Computing
Volume -39 | Issue - 2
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Detecting and classifying brain tumors utilizing deep learning
Volume -39 | Issue - 2
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A Comprehensive Review of the Literature on Machine Learning Approaches for Detecting SQL Injection Attacks
Volume -39 | Issue - 2
Simulation and Comparison of Voltage and Current Characteristics of Novel Finfet by Varying its Oxide Thickness with Single Gate Mosfet for Improved Conductivity
Main Article Content
Abstract
Aim: The current and voltage characteristics of FinFET and single gate MOSFET are simulated by varying their oxide thickness ranging from 2 nm to 20 nm. Materials and Methods: The electrical conductance of FINFET (n= 320) was compared with MOSFET (n=320) by varying oxide thickness ranging from 2 nm to 20 nm in the NANO HUB tool simulation environment.
